HMC788A 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block

Product Details

The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.

This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power.

The HMC788A offers 14 dB of gain and an output IP3 of 33 dBm while requiring only 76 mA from a 5 V supply.

The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.


  • Cellular, 3G, LTE, WiMAX, and 4G
  • LO driver applications
  • Microwave radio
  • Test and measurement equipment
  • Ultra wideband (UWB) communications

Features and Benefits

  • Gain: 14 dB typical
  • Operational frequency range: 0.01 GHz to 10 GHz
  • Input/output internally matched to 50 Ω
  • High input linearity
    • 1 dB compression (P1dB): 20 dBm typical
    • Output third-order intercept (OIP3): 33 dBm typical
  • Supply voltage: 5 V typical
  • 2 mm × 2 mm, 6-lead lead frame chip scale package 

HMC788A-EP supports defense and aerospace applications (AQEC standard)

  • Download the HMC788A-EP data sheet (pdf)
  • Extended industrial temperature range: −55°C to +105°C
  • Controlled manufacturing baseline
  • One assembly/test site
  • One fabrication site
  • Enhanced product change notification
  • Qualification data available on request